NCE15H10A - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The NCE15H10A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Features

VDS =150V,ID =100A RDS(ON).

NCE Power Semiconductor

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Datasheet Details

Part number	NCE15H10A
Manufacturer	NCE Power Semiconductor
File Size	330.19 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE15H10A Datasheet
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http://www.ncepower.com Pb Free Product NCE15H10A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE15H10A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =150V,ID =100A RDS(ON) <11mΩ @ VGS=10V (Typ:9.

Published: Feb 7, 2016 |