Datasheet Details
| Part number | NCE15H11T |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| File Size | 335.16 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 NCE15H11T Datasheet
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General Description
The NCE15H11T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in Automotive applications and a wide variety of other applications.
Key Features
- VDSS =150V,ID =110A RDS(ON) < 13mΩ @ VGS=10V （Typ：10 mΩ）.
- Good stability and uniformity with high EAS.
- Special process technology for high ESD capability.
- High density cell design for ultra low Rdson.
- Fully characterized avalanche voltage and current.
- Excellent package for good heat dissipation Schematic diagram.