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NCE15H10D - N-Channel Enhancement Mode Power MOSFET

General Description

The NCE15H10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Key Features

  • VDS =150V,ID =100A RDS(ON).

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Datasheet Details

Part number NCE15H10D
Manufacturer NCE Power Semiconductor
File Size 318.25 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE15H10D Datasheet

Full PDF Text Transcription (Reference)

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http://www.ncepower.com Pb Free Product NCE15H10D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE15H10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =150V,ID =100A RDS(ON) <11mΩ @ VGS=10V (Typ:9.