NCE15H10D - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The NCE15H10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Features

VDS =150V,ID =100A RDS(ON).

NCE Power Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	NCE15H10D
Manufacturer	NCE Power Semiconductor
File Size	318.25 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE15H10D Datasheet
Additional preview pages of the NCE15H10D datasheet.

📁 Similar Datasheet

NCE1520 - N-Channel 150-V MOSFET (VBsemi)
NCE1540KA - N-Channel 150V MOSFET (VBsemi)
NCE1570 - N-Channel 150V MOSFET (VBsemi)
NCE0103 - N-Channel 100V MOSFET (VBsemi)
NCE0157A2 - N-Channel Power MOSFET (VBsemi)
NCE01H16 - N-Channel MOSFET (VBsemi)
NCE02H10T - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
NCE2025I - N-Channel MOSFET (VBsemi)
NCE2025S - N-Channel MOSFET (VBsemi)
NCE20H11 - N-Channel 20V MOSFET (VBsemi)

Other Datasheets by NCE Power Semiconductor

NCE15H10 - N-Channel Enhancement Mode Power MOSFET
NCE15H10A - N-Channel Enhancement Mode Power MOSFET
NCE15H11T - N-Channel Enhancement Mode Power MOSFET
NCE15H15T - N-Channel Enhancement Mode Power MOSFET
NCE1502R - N-Channel Enhancement Mode Power MOSFET
NCE1505S - N-Channel Enhancement Mode Power MOSFET
NCE1507I - N-Channel Enhancement Mode Power MOSFET
NCE1507IA - N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text

http://www.ncepower.com Pb Free Product NCE15H10D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE15H10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =150V,ID =100A RDS(ON) <11mΩ @ VGS=10V (Typ:9.

Published: Jun 2, 2018 |