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NCE3415Y - P-Channel Enhancement Mode Power MOSFET

General Description

The NCE3415Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V.

This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

Key Features

  • VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.5V ESD Rating: 2500V HBM.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Schematic diagram Marking and pin Assignment.

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Datasheet Details

Part number NCE3415Y
Manufacturer NCE Power Semiconductor
File Size 253.14 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE3415Y Datasheet

Full PDF Text Transcription for NCE3415Y (Reference)

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http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Pb Free Product NCE3415Y Description The NCE3415Y uses advanced trench technology to provide excellent...

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tion The NCE3415Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.

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