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NCE3416 - N-Channel Enhancement Mode Power MOSFET

General Description

The NCE3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

Key Features

  • VDS = 20V,ID =6.5A RDS(ON).

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Datasheet Details

Part number NCE3416
Manufacturer NCE Power Semiconductor
File Size 248.91 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE3416 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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http://www.ncepower.com Pb Free Product NCE3416 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = 20V,ID =6.5A RDS(ON) <40mΩ @ VGS=1.8V RDS(ON) <33mΩ @ VGS=2.5V RDS(ON) <27mΩ @ VGS=4.