Datasheet Details
| Part number | NCE3415Y |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| File Size | 253.14 KB |
| Description | P-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 NCE3415Y Datasheet
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General Description
The NCE3415Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V.
This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
Key Features
- VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.5V ESD Rating: 2500V HBM.
- High Power and current handing capability.
- Lead free product is acquired.
- Surface mount package Schematic diagram Marking and pin Assignment.