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NCE3417 - P-Channel Enhancement Mode Power MOSFET

Product Overview

NCE Power Semiconductor

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NCE3417 P-Channel Enhancement Mode Power MOSFET by NCE Power Semiconductor - Datasheet Preview — Datasheet preview – NCE3417

Datasheet Details

Part number	NCE3417
Manufacturer	NCE Power Semiconductor
File Size	275.08 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	NCE3417 Datasheet
Additional preview pages of the NCE3417 datasheet.

Product details

Description

The NCE3417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = -12V,ID = -4.4A RDS(ON) < 56mΩ @ VGS=-2.5V RDS(ON) < 40mΩ @ VGS=-4.5V D G S Schematic diagram.
High power and current handing capability.
Lead free product is acquired.
Surface mount package Marking and pin Assignment.

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Published: Jun 2, 2018 |