Full PDF Text Transcription for NCE3416 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
NCE3416. For precise diagrams, and layout, please refer to the original PDF.
http://www.ncepower.com Pb Free Product NCE3416 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3416 uses advanced trench technology to provide excellent R...
View more extracted text
ion The NCE3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = 20V,ID =6.5A RDS(ON) <40mΩ @ VGS=1.8V RDS(ON) <33mΩ @ VGS=2.5V RDS(ON) <27mΩ @ VGS=4.
NCE3416 Datasheet
