NCE4007S - P-Channel Enhancement Mode Power MOSFET

Description

The NCE4007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =-40V,ID =-6.2A RDS(ON).

NCE Power Semiconductor

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Datasheet Details

Part number	NCE4007S
Manufacturer	NCE Power Semiconductor
File Size	395.86 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	NCE4007S Datasheet
Additional preview pages of the NCE4007S datasheet.

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http://www.ncepower.com Pb Free Product NCE4007S NCE P-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE4007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =-40V,ID =-6.

Published: May 22, 2015 |