NCE4012S Datasheet | NCE Power Semiconductor

http://.ncepower. Pb Free Product NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4012S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =40V,ID =12A RDS(ON) <12mΩ @ VGS=10V (Typ. 8.4 mΩ) RDS(ON) <18mΩ @ VGS=4.5V (Typ. 12.3 mΩ) - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation - Special process technology for high ESD capability Application - Load switching - Hard switched and high frequency circuits -...