NCE4007S Datasheet | NCE Power Semiconductor

http://.ncepower. Pb Free Product NCE P-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE4007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL Features - VDS =-40V,ID =-6.2A RDS(ON) <25mΩ @ VGS=-10V - High density cell design for ultra low Rdson - Fully characterized Avalanche voltage and current - Excellent package for good heat dissipation Schematic diagram Application - Power switching application - Hard Switched and High Frequency Circuits - DC-DC Converter Marking and pin Assignment SOP-8 top view Package Marking And Ordering Information Device...