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NCE4007S - P-Channel Enhancement Mode Power MOSFET

General Description

The NCE4007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =-40V,ID =-6.2A RDS(ON).

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Datasheet Details

Part number NCE4007S
Manufacturer NCE Power Semiconductor
File Size 395.86 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE4007S Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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http://www.ncepower.com Pb Free Product NCE4007S NCE P-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE4007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =-40V,ID =-6.