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NCE4009S - N-Channel Enhancement Mode Power MOSFET

General Description

The NCE4009S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Key Features

  • N-Channel VDS =40V,ID =9A RDS(ON) < 16mΩ @ VGS=10V RDS(ON) < 24mΩ @ VGS=4.5V Schematic diagram.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package NCE4009S NCE4009S SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol.

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Datasheet Details

Part number NCE4009S
Manufacturer NCE Power Semiconductor
File Size 369.39 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE4009S Datasheet

Full PDF Text Transcription (Reference)

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http://www.ncepower.com Pb Free Product NCE4009S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4009S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS =40V,ID =9A RDS(ON) < 16mΩ @ VGS=10V RDS(ON) < 24mΩ @ VGS=4.