n-channel enhancement mode power mosfet.
* VDS=60V,ID=5A RDS(ON) <35mΩ @ VGS=10V (Typ.26mΩ) RDS(ON) <45mΩ @ VGS=4.5V (Typ.32mΩ)
* High density cell design for ultra low Rdson
* Fully characterized av.
General Features
* VDS=60V,ID=5A RDS(ON) <35mΩ @ VGS=10V (Typ.26mΩ) RDS(ON) <45mΩ @ VGS=4.5V (Typ.32mΩ)
* High.
The NCE6005AR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS=60V,ID=5A RDS(ON) <35mΩ @ VGS=10V (Typ.26mΩ) RDS(ON) <45mΩ @ VGS.
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