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NCE6005AR - N-Channel Enhancement Mode Power MOSFET

General Description

The NCE6005AR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS=60V,ID=5A RDS(ON).

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Datasheet Details

Part number NCE6005AR
Manufacturer NCE Power Semiconductor
File Size 316.23 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE6005AR Datasheet

Full PDF Text Transcription for NCE6005AR (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NCE6005AR. For precise diagrams, and layout, please refer to the original PDF.

http://www.ncepower.com Pb Free Product NCE6005AR NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6005AR uses advanced trench technology and design to prov...

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ption The NCE6005AR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS=60V,ID=5A RDS(ON) <35mΩ @ VGS=10V (Typ.26mΩ) RDS(ON) <45mΩ @ VGS=4.5V (Typ.