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NCE Power Semiconductor

NCE6007S Datasheet Preview

NCE6007S Datasheet

N-Channel Enhancement Mode Power MOSFET

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http://www.ncepower.com
Pb Free Product
NCE6007S
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE6007S uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =60V,ID =7A
RDS(ON) < 30m@ VGS=10V Typ24m
RDS(ON) < 35m@ VGS=4.5V Typ27m
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Low gate to drain charge to reduce switching losses
Schematic diagram
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
6007
NCE6007S
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
60
±20
7
5
40
2.1
-55 To 150
Unit
V
V
A
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient(Note 2)
RθJA
60 /W
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0




NCE Power Semiconductor

NCE6007S Datasheet Preview

NCE6007S Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

http://www.ncepower.com
Pb Free Product
NCE6007S
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=60V,VGS=0V
VGS=±20V,VDS=0V
60 69
-
V
- - 1 μA
- - ±100 nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
1.0 1.4 2.0 V
Drain-Source On-State Resistance RDS(ON)
Forward Transconductance
Dynamic Characteristics (Note4)
gFS
VGS=10V, ID=7A
VGS=4.5V, ID=6A
VDS=5V,ID=7A
24 30 m
27 35 m
20 -
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=25V,VGS=0V,
F=1.0MHz
1920
155
116
PF
PF
PF
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDS=30V, RL=4.7
VGS=10V,RGEN=3
VDS=30V,ID=7A,
VGS=10V
- 8 - nS
- 5 - nS
- 29 - nS
- 6 - nS
- 50 - nC
- 8 - nC
- 16 - nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
IS
trr
Qrr
VGS=0V,IS=7A
TJ = 25°C, IF =7A
di/dt = 100A/μs(Note3)
- - 1.2 V
- - 7A
- 35 - nS
- 43 - nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0


Part Number NCE6007S
Description N-Channel Enhancement Mode Power MOSFET
Maker NCE Power Semiconductor
Total Page 7 Pages
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