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NCE6007S Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: NCE Power Semiconductor

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Datasheet Details

Part number NCE6007S
Manufacturer NCE Power Semiconductor
File Size 412.44 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE6007S Datasheet

General Description

The NCE6007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

General

Overview

http://www.ncepower.com Pb Free Product NCE6007S NCE N-Channel Enhancement Mode Power.

Key Features

  • VDS =60V,ID =7A RDS(ON) < 30mΩ @ VGS=10V （Typ：24mΩ） RDS(ON) < 35mΩ @ VGS=4.5V （Typ：27mΩ）.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Low gate to drain charge to reduce switching losses Schematic diagram.

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