Datasheet4U Logo Datasheet4U.com

NCE75H21D - N-Channel Enhancement Mode Power MOSFET

Description

The NCE75H21D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in Automotive applications and a wide variety of other applications.

Features

  • VDSS =75V,ID =210A RDS(ON) < 4mΩ @ VGS=10V.
  • Good stability and uniformity with high EAS.
  • Special process technology for high ESD capability.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Excellent package for good heat dissipation Schematic diagram.

📥 Download Datasheet

Datasheet Details

Part number NCE75H21D
Manufacturer NCE Power Semiconductor
File Size 299.59 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE75H21D Datasheet
Other Datasheets by NCE Power Semiconductor

Full PDF Text Transcription

Click to expand full text
http://www.ncepower.com Pb Free Product NCE75H21D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H21D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications.
Published: |