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NCE Power Semiconductor

NCEP0116AS Datasheet Preview

NCEP0116AS Datasheet

N-Channel Super Trench Power MOSFET

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http://www.ncepower.com
Pb Free Product
NCEP0116AS
NCE N-Channel Super Trench Power MOSFET
Description
The NCEP0116AS uses Super Trench technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of RDS(ON) and Qg. This device is ideal for
high-frequency switching and synchronous rectification.
General Features
VDS =100V,ID =16A
RDS(ON)=7.9m(typical) @ VGS=10V
RDS(ON)=9.1m(typical) @ VGS=4.5V
Schematic diagram
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
150 °C operating temperature
Pb-free lead plating
100% UIS tested
Marking and pin assignment
Application
DC/DC Converter
Ideal for high-frequency switching and synchronous
rectification
100% UIS TESTED!
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCEP0116AS
NCEP0116AS
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
100
±20
16
11.3
64
3.5
0.028
210
-55 To 150
Unit
V
V
A
A
A
W
W/
mJ
Wuxi NCE Power Co., Ltd
Page 1
V1.0




NCE Power Semiconductor

NCEP0116AS Datasheet Preview

NCEP0116AS Datasheet

N-Channel Super Trench Power MOSFET

No Preview Available !

http://www.ncepower.com
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient(Note 2)
RθJA
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=100V,VGS=0V
VGS=±20V,VDS=0V
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=16A
VGS=4.5V, ID=16A
VDS=10V,ID=16A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=50V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=50V,ID=16A
VGS=10V,RG=1.6
VDS=50V,ID=16A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD VGS=0V,IS=16A
IS
trr TJ = 25°C, IF = IS
Qrr di/dt = 100A/μs(Note3)
Pb Free Product
NCEP0116AS
36 /W
Min Typ Max Unit
100 -
--
--
-
1
±100
V
μA
nA
1.0 1.7
- 7.9
- 9.1
50 -
2.2
9.5
10.6
-
V
m
m
S
- 4960
- 389
- 25.3
PF
PF
PF
- 15.4
- 9.9
- 42.9
- 5.5
- 63.8
- 16.5
- 8.8
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- - 1.2
--
16
- 105
-
- 200
-
V
A
nS
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25,VDD=50V,VG=10V,L=0.5mH,Rg=25
Wuxi NCE Power Co., Ltd
Page 2
V1.0


Part Number NCEP0116AS
Description N-Channel Super Trench Power MOSFET
Maker NCE Power Semiconductor
Total Page 7 Pages
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