NCEP0116AS Datasheet - NCE Power Semiconductor

N-Channel Super Trench Power MOSFET

NCEP0116AS Features

* VDS =100V,ID =16A RDS(ON)=7.9mΩ (typical) @ VGS=10V RDS(ON)=9.1mΩ (typical) @ VGS=4.5V Schematic diagram

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Marking and pi

NCEP0116AS General Description

The NCEP0116AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching.

NCEP0116AS Datasheet (414.91 KB)

NCEP0116AS Datasheet Preview — Preview of NCEP0116AS PDF

Datasheet Details

Part number:

NCEP0116AS

Manufacturer:

NCE Power Semiconductor

File Size:

414.91 KB

Description:

N-channel super trench power mosfet.

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NCEP0116AS N-Channel Super Trench Power MOSFET NCE Power Semiconductor

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NCEP0116AS Features

NCEP0116AS General Description

Datasheet Details

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Description:

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