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NCEP01T13AD Datasheet

Manufacturer: NCE Power Semiconductor
NCEP01T13AD datasheet preview

NCEP01T13AD Details

Part number NCEP01T13AD
Datasheet NCEP01T13AD-NCEPowerSemiconductor.pdf
File Size 317.09 KB
Manufacturer NCE Power Semiconductor
Description N-Channel Super Trench Power MOSFET
NCEP01T13AD page 2 NCEP01T13AD page 3

NCEP01T13AD Overview

The NCEP01T13AD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

NCEP01T13AD Key Features

  • VDS =100V,ID =130A RDS(ON) <4.6mΩ @ VGS=10V
  • Excellent gate charge x RDS(on) product
  • Very low on-resistance RDS(on)
  • 175 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested
  • DC/DC Converter
  • Ideal for high-frequency switching and synchronous

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