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NCEP6080AG Datasheet - NCE Power Semiconductor

N-Channel Super Trench Power MOSFET

NCEP6080AG Features

* VDS =60V,ID =80A RDS(ON) < 4.0mΩ @ VGS=10V (Typ:3.5mΩ) RDS(ON) < 5.0mΩ @ VGS=4.5V (Typ:4.0mΩ)

* Excellent gate charge x RDS(on) product

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Schematic diagram Marking and p

NCEP6080AG General Description

The NCEP6080AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching.

NCEP6080AG Datasheet (470.51 KB)

Preview of NCEP6080AG PDF

Datasheet Details

Part number:

NCEP6080AG

Manufacturer:

NCE Power Semiconductor

File Size:

470.51 KB

Description:

N-channel super trench power mosfet.

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TAGS

NCEP6080AG N-Channel Super Trench Power MOSFET NCE Power Semiconductor

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