NCEP6060GU
NCEP6060GU is N-Channel Super Trench II Power MOSFET manufactured by NCE Power Semiconductor.
Description
The NCEP6060GU uses Super Trench technology that is
General Features uniquely optimized to provide the most efficient high
- VDS =60V,ID =60A frequency switching performance. Both conduction and
RDS(ON)=5.6mΩ (typical) @ VGS=10V switching power losses are minimized due to an extremely low
- Excellent gate charge x RDS(on) product(FOM) bination of RDS(ON) and Qg. This device is ideal for
- Very low on-resistance RDS(on) high-frequency switching and synchronous rectification.
- 150 °C operating temperature
Application
- Pb-free lead plating
- DC/DC Converter
- Ideal for high-frequency switching and synchronous rectification y 100% UIS TESTED! Onl 100% ΔVds TESTED!
DFN 5X6
Use times
Top View
Bottom View
Schematic Diagram sheng Package Marking and Ordering Information g Device Marking
Device
Device Package
Reel Size
Tape width n P6060GU
DFN5X6-8L
- -
To Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Quantity
- r Drain-Source Voltage Fo Gate-Source Voltage
Parameter
Drain Current-Continuous (Silicon Limited)
Symbol VDS VGS ID
Limit
60 ±20 60
Unit
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power...
