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NCEP6080AG - N-Channel Super Trench Power MOSFET

Datasheet Summary

Description

The NCEP6080AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =60V,ID =80A RDS(ON) < 4.0mΩ @ VGS=10V (Typ:3.5mΩ) RDS(ON) < 5.0mΩ @ VGS=4.5V (Typ:4.0mΩ).
  • Excellent gate charge x RDS(on) product.
  • Very low on-resistance RDS(on).
  • 150 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested Schematic diagram Marking and pin assignment DDDD DDDD.

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Datasheet Details

Part number NCEP6080AG
Manufacturer NCE Power Semiconductor
File Size 470.51 KB
Description N-Channel Super Trench Power MOSFET
Datasheet download datasheet NCEP6080AG Datasheet
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http://www.ncepower.com Pb Free Product NCEP6080AG NCE N-Channel Super Trench Power MOSFET Description The NCEP6080AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =60V,ID =80A RDS(ON) < 4.0mΩ @ VGS=10V (Typ:3.5mΩ) RDS(ON) < 5.0mΩ @ VGS=4.5V (Typ:4.
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