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NCEP6020AS - N-Channel Super Trench Power MOSFET

Datasheet Summary

Description

The NCEP6020AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =60V,ID =20A RDS(ON)=4.0mΩ (typical) @ VGS=10V RDS(ON)=4.6mΩ (typical) @ VGS=4.5V Schematic diagram.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 150 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested Marking and pin assignment.

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Datasheet Details

Part number NCEP6020AS
Manufacturer NCE Power Semiconductor
File Size 446.10 KB
Description N-Channel Super Trench Power MOSFET
Datasheet download datasheet NCEP6020AS Datasheet
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http://www.ncepower.com Pb Free Product NCEP6020AS NCE N-Channel Super Trench Power MOSFET Description The NCEP6020AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =60V,ID =20A RDS(ON)=4.0mΩ (typical) @ VGS=10V RDS(ON)=4.6mΩ (typical) @ VGS=4.
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