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NCE Power Semiconductor

NCEP60T12A Datasheet Preview

NCEP60T12A Datasheet

N-Channel Super Trench Power MOSFET

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http://www.ncepower.com
Pb Free Product
NCEP60T12A
NCE N-Channel Super Trench Power MOSFET
Description
The NCEP60T12A uses Super Trench technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of RDS(ON) and Qg. This device is ideal for
high-frequency switching and synchronous rectification.
General Features
VDS =60V,ID =120A
RDS(ON) < 4.0mΩ @ VGS=10V (Typ:3.5mΩ)
RDS(ON) < 5.0mΩ @ VGS=4.5V (Typ:4.0mΩ)
Excellent gate charge x RDS(on) product
Very low on-resistance RDS(on)
175 °C operating temperature
Pb-free lead plating
100% UIS tested
Schematic diagram
Marking and pin assignment
Application
DC/DC Converter
Ideal for high-frequency switching and synchronous
rectification
100% UIS TESTED!
100% ΔVds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
NCEP60T12A
NCEP60T12A
TO-220-3L
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
-
Limit
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS
±20
Drain Current-Continuous (Silicon Limited)
ID 120
Drain Current-Continuous(TC=100)
ID (100)
100
Pulsed Drain Current
Maximum Power Dissipation
IDM 480
PD 180
Derating factor
Single pulse avalanche energy (Note 5)
1.2
EAS 500
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 175
Quantity
-
Unit
V
V
A
A
A
W
W/
mJ
Wuxi NCE Power Co., Ltd
Page 1
V1.0




NCE Power Semiconductor

NCEP60T12A Datasheet Preview

NCEP60T12A Datasheet

N-Channel Super Trench Power MOSFET

No Preview Available !

http://www.ncepower.com
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=60V,VGS=0V
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
IGSS
VGS(th)
VGS=±20V,VDS=0V
VDS=VGS,ID=250μA
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=60A
VGS=4.5V, ID=60A
Forward Transconductance
Dynamic Characteristics (Note4)
gFS VDS=10V,ID=60A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=30V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
td(on)
Turn-on Rise Time
Turn-Off Delay Time
tr
td(off)
VDD=30V,ID=60A
VGS=10V,RG=4.7Ω
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
VDS=30V,ID=60A,
Qgs
VGS=10V
Qgd
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
VSD VGS=0V,IS=120A
IS
Reverse Recovery Time
Reverse Recovery Charge
trr TJ = 25°C, IF = IS
Qrr di/dt = 100A/μs(Note3)
Pb Free Product
NCEP60T12A
0.83 /W
Min Typ Max Unit
60 - V
- - 1 μA
- - ±100 nA
1.0 1.7
- 3.5
- 4.0
40 -
2.4
4.0
5.0
-
V
S
- 4000
- 680
- 23
-
-
-
PF
PF
PF
- 11
-5
- 56
- 12
- 67
- 12
- 8.5
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- 1.2
- - 120
- 48
- 60
V
A
nS
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω
Wuxi NCE Power Co., Ltd
Page 2
V1.0


Part Number NCEP60T12A
Description N-Channel Super Trench Power MOSFET
Maker NCE Power Semiconductor
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NCEP60T12A Datasheet PDF






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