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NCE Power Semiconductor

NCEP85T25T Datasheet Preview

NCEP85T25T Datasheet

NCE N-Channel Super Trench Power MOSFET

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http://www.ncepower.com
Pb Free Product
NCEP85T25T
NCE N-Channel Super Trench Power MOSFET
Description
The NCEP85T25T uses Super Trench technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of RDS(ON) and Qg. This device is ideal for
high-frequency switching and synchronous rectification.
General Features
VDS =85V,ID =250A
RDS(ON) <2.8m@ VGS=10V
Excellent gate charge x RDS(on) product
Very low on-resistance RDS(on)
175 °C operating temperature
Pb-free lead plating
100% UIS tested
Application
DC/DC Converter
Ideal for high-frequency switching and synchronous
rectification
Schematic diagram
TO-247 top view
100% UIS TESTED!
100% Vds TESTED!
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
NCEP85T25T
NCEP85T25T
TO-247
-
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Limit
85
±20
Drain Current-Continuous
ID 250
Drain Current-Continuous(TC=100)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
ID (100)
IDM
PD
EAS
TJ,TSTG
180
800
300
2
1700
-55 To 175
Quantity
-
Unit
V
V
A
A
A
W
W/
mJ
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
0.5 /W
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0




NCE Power Semiconductor

NCEP85T25T Datasheet Preview

NCEP85T25T Datasheet

NCE N-Channel Super Trench Power MOSFET

No Preview Available !

http://www.ncepower.com
Pb Free Product
NCEP85T25T
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=85V,VGS=0V
VGS=±20V,VDS=0V
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=100A
VDS=10V,ID=100A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=40V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=40V,ID=100A
VGS=10V,RG=1.6
VDS=40V,ID=100A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD VGS=0V,IF= IS
IS
trr TJ = 25°C, IF = IS
Qrr di/dt = 100A/μs(Note3)
Min Typ Max Unit
85 - V
- - 1 μA
- - ±100 nA
2.5 4.5 V
- - 2.8 m
- 90
-
S
- 11500
- 2990
- 105
-
-
-
PF
PF
PF
- 28
- 73
- 86
- 33
- 165
- 56
- 35
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- 1.2
- - 250
- 115
- 320
V
A
nS
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25,VDD=42.5V,VG=10V,L=0.5mH,Rg=25
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0


Part Number NCEP85T25T
Description NCE N-Channel Super Trench Power MOSFET
Maker NCE Power Semiconductor
Total Page 7 Pages
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