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NCEP85T30T Datasheet

Manufacturer: NCE Power Semiconductor
NCEP85T30T datasheet preview

Datasheet Details

Part number NCEP85T30T
Datasheet NCEP85T30T-NCEPowerSemiconductor.pdf
File Size 324.26 KB
Manufacturer NCE Power Semiconductor
Description N-Channel Super Trench Power MOSFET
NCEP85T30T page 2 NCEP85T30T page 3

NCEP85T30T Overview

The NCEP85T30T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

NCEP85T30T Key Features

  • VDS =85V,ID =300A RDS(ON) <2.2mΩ @ VGS=10V
  • Excellent gate charge x RDS(on) product
  • Very low on-resistance RDS(on)
  • 175 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested
  • DC/DC Converter
  • Ideal for high-frequency switching and synchronous
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NCEP85T30T Distributor

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