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NCEP8818AS Datasheet

Manufacturer: NCE Power Semiconductor
NCEP8818AS datasheet preview

Datasheet Details

Part number NCEP8818AS
Datasheet NCEP8818AS-NCEPowerSemiconductor.pdf
File Size 377.10 KB
Manufacturer NCE Power Semiconductor
Description N-Channel Super Trench Power MOSFET
NCEP8818AS page 2 NCEP8818AS page 3

NCEP8818AS Overview

The NCEP8818AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

NCEP8818AS Key Features

  • VDS =88V,ID =18A RDS(ON)=6.1mΩ (typical) @ VGS=10V RDS(ON)=7.1mΩ (typical) @ VGS=4.5V
  • Excellent gate charge x RDS(on) product(FOM)
  • Very low on-resistance RDS(on)
  • 150 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested
  • DC/DC Converter
  • Ideal for high-frequency switching and synchronous
NCE Power Semiconductor logo - Manufacturer

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NCEP8818AS Distributor

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