* High DC current amplifier ratio hFE ≥ 100 (VCE =
* 5 V, IC =
* 0.5 A)
* Mold package that does not require an insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base
2SB1453
NEC
130.31 KB
Pnp silicon epitaxial power transistor.
DATA SHEET SILICON TRANSISTOR 2SB1453 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1453 is a power transistor that can di.
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