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2SB772 - PNP SILICON POWER TRANSISTOR

Description

The 2SB772 is PNP silicon transistor suited for the output stage of 3 W audio amplifier, voltage regulator, DC-DC converter and relay driver.

8.5 MAX.

2.8 MAX.

Features

  • Low saturation voltage VCE(sat) ≤.
  • 0.5 V (IC =.
  • 2 A, IB =.
  • 0.2 A).
  • Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE =.
  • 2 V, IC =.
  • 1 A).
  • Less cramping space required due to small and thin package and reducing the trouble for attachment to a radiator. No insulator bushing required. 12.0 MAX. 2.5 ±0.2 13.0 MIN.

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Datasheet Details

Part number 2SB772
Manufacturer NEC
File Size 441.09 KB
Description PNP SILICON POWER TRANSISTOR
Datasheet download datasheet 2SB772 Datasheet

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www.DataSheet4U.com DATA SHEET PNP SILICON POWER TRANSISTOR 2SB772 PNP SILICON POWER TRANSISTOR DESCRIPTION The 2SB772 is PNP silicon transistor suited for the output stage of 3 W audio amplifier, voltage regulator, DC-DC converter and relay driver. PACKAGE DRAWING (Unit: mm) 8.5 MAX. 3.2 ±0.2 3.8 ±0.2 2.8 MAX. FEATURES • Low saturation voltage VCE(sat) ≤ −0.5 V (IC = −2 A, IB = −0.2 A) • Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = −2 V, IC = −1 A) • Less cramping space required due to small and thin package and reducing the trouble for attachment to a radiator. No insulator bushing required. 12.0 MAX. 2.5 ±0.2 13.0 MIN. ABSOLUTE MAXIMUM RATINGS Maximum Temperature Storage Temperature −55 to +150°C Junction Temperature 150°C Maximum Maximum Power Dissipation 1.
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