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  NEC Electronic Components Datasheet  

2SC2335 Datasheet

SILICON POWER TRANSISTOR

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DATA SHEET
SILICON POWER TRANSISTOR
2SC2335
NPN SILICON TRIPLE DIFFUSED TRANSISTOR
FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING
The 2SC2335 is a mold power transistor developed for high-speed
high-voltage switching, and is ideal for use as a driver in devices such
as switching regulators, DC/DC converters, and high-frequency power
amplifiers.
FEATURES
• Low collector saturation voltage: VCE(sat) = 1.0 V MAX. @IC = 3.0 A
• Fast switching speed: tf = 1.0 µs MAX. @IC = 3.0 A
• Wide base reverse-bias SOA: VCEX(SUS)1 = 450 V MIN. @IC = 3.0 A
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
IB(DC)
PT
Tj
Tstg
Conditions
PW 300 µs,
duty cycle 10%
TC = 25°C
TA = 25°C
Ratings
500
400
7.0
7.0
15
Unit
V
V
V
A
A
3.5
40
1.5
150
55 to +150
A
W
W
°C
°C
ORDERING INFORMATION
Part No.
2SC2335
Package
TO-220AB
(TO-220AB)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14861EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928


  NEC Electronic Components Datasheet  

2SC2335 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
Collector to emitter voltage
Collector to emitter voltage
Collector to emitter voltage
VCEO(SUS)
VCEX(SUS)1
VCEX(SUS)2
IC = 3.0 A, IB1 = 0.6 A, L = 1 mH
IC = 3.0 A, IB1 = IB2 = 0.6 A,
VBE(OFF) = 5.0 V, L = 180 µH, clamped
IC = 6.0 A, IB1 = 2.0 A, IB2 = 0.6 A,
VBE(OFF) = 5.0 V, L = 180 µH, clamped
Collector cutoff current
Collector cutoff current
Collector cutoff current
Collector cutoff current
ICBO
ICER
ICEX1
ICEX2
VCB = 400 V, IE = 0 A
VCE = 400 V, RBE = 51 , TA = 125°C
VCE = 400 V, VBE(OFF) = 1.5 V
VCE = 400 V, VBE(OFF) = 1.5 V,
TA = 125°C
Emitter cutoff current
DC current gain
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Turn-on time
Storage time
Fall time
IEBO
hFE1
hFE2
hFE3
VCE(sat)
VBE(sat)
ton
tstg
tf
VEB = 5.0 V, IC = 0 A
VCE = 5.0 V, IC = 0.1 ANote
VCE = 5.0 V, IC = 1.0 ANote
VCE = 5.0 V, IC = 3.0 ANote
IC = 3.0 A, IB = 0.6 ANote
IC = 3.0 A, IB = 0.6 ANote
IC = 3.0 A, RL = 50 ,
IB1 = IB2 = 0.6 A, VCC 150 V
Refer to the test circuit.
Note Pulse test PW 350 µs, duty cycle 2%
hFE CLASSIFICATION
Marking
hFE2
M
20 to 40
L
30 to 60
K
40 to 80
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
2SC2335
MIN.
400
450
400
20
20
10
TYP.
MAX.
10
1.0
10
1.0
10
80
80
1.0
1.2
1.0
2.5
1.0
Unit
V
V
V
µA
mA
µA
mA
µA
V
V
µs
µs
µs
Base current
waveform
Collector current
waveform
2 Data Sheet D14861EJ2V0DS


Part Number 2SC2335
Description SILICON POWER TRANSISTOR
Maker NEC
Total Page 6 Pages
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