2SC3603 transistor equivalent, npn epitaxial silicon transistor.
* Low noise : NF = 2.1 dB TYP. @ f = 2.0 GHz
* High power gain : GA = 10 dB TYP. @ f = 2.0 GHz
C
3.8 MIN.
3.8 MIN. B
PARAMETER Collector to Base Voltage Collec.
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device befor.
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