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2SC4225 - NPN SILICON EPITAXIAL TRANSISTOR

Description

The 2SC4225 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF through UHF band.

It has large dynamic range and good current characteristics.

Features

  • 2.0 ± 0.2 0.3 +0.1.
  • Low Noise and High Gain NF = 1.5 dB TYP. S21e 2 = 10 dB TYP. at VCE = 10 V, IC = 5 mA, f = 1 GHz at VCE = 10 V, IC = 20 mA, f = 1 GHz (reference value) 0.65 0.65 2 0.3.

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Datasheet Details

Part number 2SC4225
Manufacturer NEC
File Size 41.68 KB
Description NPN SILICON EPITAXIAL TRANSISTOR
Datasheet download datasheet 2SC4225 Datasheet
Additional preview pages of the 2SC4225 datasheet.

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Full PDF Text Transcription

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DATA SHEET SILICON TRANSISTOR 2SC4225 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4225 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF through UHF band. It has large dynamic range and good current characteristics. PACKAGE DIMENSIONS in millimeters 2.1 ± 0.1 1.25 ± 0.1 FEATURES 2.0 ± 0.2 0.3 +0.1 –0 • Low Noise and High Gain NF = 1.5 dB TYP. S21e 2 = 10 dB TYP. at VCE = 10 V, IC = 5 mA, f = 1 GHz at VCE = 10 V, IC = 20 mA, f = 1 GHz (reference value) 0.65 0.65 2 0.
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