2SC4783 Datasheet | NEC

DESCRIPTION The 2SC4783 is NPN silicon epitaxial transistor. PACKAGE DRAWING (Unit: mm) 0.3 ± 0.05 0.1 +0.1 - 0.05 FEATURES 1.6 ± 0.1 0.8 ± 0.1 - High DC current gain: h FE2 = 200 TYP. - High voltage: VCEO = 50 V 3 0 to 0.1 2 0.2 +0.1 - 0 0.5 0.5 1.0 1.6 ± 0.1 0.6 0.75 ± 0.05 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) Note1 Note2 VCBO VCEO VEBO IC(DC) IC(pulse) PT Tj Tstg 60 50 5.0 100 200 200 150 - 55 to + 150 V V V m A m A m W °C °C Total Power Dissipation (TA = 25°C) Junction Temperature Storage Temperature Range 1: Emitter 2: Base 3: Collector Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50% 2 2. When mounted on ceramic substrate of 3.0 cm x 0.64 mm ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Collector Cut-off Current Emitter Cut-off Current DC Current Gain Note SYMBOL ICBO IEBO h FE1 h FE2 TEST CONDITIONS VCB = 60 V, IE = 0 VEB = 5.0 V, IC = 0 VCE = 6.0 V, IC = 0.1 m A VCE = 6.0 V, IC = 1.0 m A VCE = 6.0 V, IC = 1.0 m A IC = 100 m A, IB = 10 m A IC = 100 m A, IB = 10 m A VCE = 6.0 V, IE = - 10 m A VCE = 6.0 V, IE = 0, f = 1.0 MHz MIN. TYP. MAX. 100 100 UNIT n A n A - 50 90 200 0.62 0.15 0.86 150 250 3.0 4.0 0.3 1.0 600 - V V V MHz p F Base to Emitter Voltage Note Note VBE VCE(sat) VBE(sat) f T Cob Collector Saturation Voltage Base Saturation Voltage Gain Bandwidth Product Output Capacitance Note Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2% h FE CLASSFICATION Marking h FE2 L4 90 to 180 L5 135 to 270 L6 200 to 400 L7 300 to...