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2SC5787 Datasheet

NPN SILICON RF TRANSISTOR

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DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5787
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW NOISE
3-PIN LEAD-LESS MINIMOLD
FEATURES
• Ideal for 3 GHz or higher OSC applications
• Low noise, high gain
fT = 20 GHz TYP., S21e2 = 13 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz
NF = 1.4 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt
• UHS0 technology (fT = 25 GHz) adopted
• High reliability through use of gold electrodes
• 3-pin lead-less minimold package (1005 PKG)
ORDERING INFORMATION
Part Number
2SC5787
2SC5787-T3
Quantity
50 pcs (Non reel)
10 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 2 (Base) face the perforation side of the tape
Remark To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
P Note
tot
Tj
Tstg
Ratings
9.0
3.0
1.5
35
105
150
65 to +150
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Unit
V
V
V
mA
mW
°C
°C
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10070EJ01V0DS (1st edition)
(Previous No. P15786EJ1V0DS00)
Date Published January 2002 CP(K)
Printed in Japan
The mark shows major revised points.
© NEC Corporation 2001
© NEC Compound Semiconductor Devices 2002


  NEC Electronic Components Datasheet  

2SC5787 Datasheet

NPN SILICON RF TRANSISTOR

No Preview Available !

2SC5787
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Symbol
Test Conditions
ICBO VCB = 5 V, IE = 0 mA
IEBO VEB = 1 V, IC = 0 mA
h Note 1
FE
VCE = 1 V, IC = 5 mA
fT VCE = 1 V, IC = 20 mA, f = 2 GHz
S21e2 VCE = 1 V, IC = 20 mA, f = 2 GHz
NF VCE = 1 V, IC = 5 mA, f = 2 GHz,
ZS = Zopt
C Note 2
re
VCB = 0.5 V, IE = 0 mA, f = 1 MHz
Notes 1. Pulse measurement: PW 350 µs, Duty Cycle 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
Marking
hFE Value
FB
B7
50 to 100
MIN. TYP. MAX. Unit
– – 100 nA
– – 100 nA
50 – 100 –
17 20
– GHz
11 13 – dB
– 1.4 2.5 dB
0.22 0.30
pF
2 Data Sheet PU10070EJ01V0DS


Part Number 2SC5787
Description NPN SILICON RF TRANSISTOR
Maker NEC
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2SC5787 Datasheet PDF





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