NPN SILICON RF TRANSISTOR
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW NOISE
3-PIN LEAD-LESS MINIMOLD
• Ideal for 3 GHz or higher OSC applications
• Low noise, high gain
fT = 20 GHz TYP., S21e2 = 13 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz
NF = 1.4 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt
• UHS0 technology (fT = 25 GHz) adopted
• High reliability through use of gold electrodes
• 3-pin lead-less minimold package (1005 PKG)
50 pcs (Non reel)
• 8 mm wide embossed taping
• Pin 2 (Base) face the perforation side of the tape
Remark To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Total Power Dissipation
−65 to +150
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10070EJ01V0DS (1st edition)
(Previous No. P15786EJ1V0DS00)
Date Published January 2002 CP(K)
Printed in Japan
The mark • shows major revised points.
© NEC Corporation 2001
© NEC Compound Semiconductor Devices 2002