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2SC5752 - NPN SILICON RF TRANSISTOR

Key Features

  • Ideal for medium output power amplification.
  • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm.
  • HFT3 technology (fT = 12 GHz) adopted.
  • High reliability through use of gold electrodes.
  • 4-pin super minimold package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com DATA SHEET NPN SILICON RF TRANSISTOR 2SC5752 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gold electrodes • 4-pin super minimold package ORDERING INFORMATION Part Number 2SC5752 2SC5752-T1 Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 3 (Base), Pin 4 (Emitter) face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 50 pcs.