2SC5750 - NPN SILICON RF TRANSISTOR

Renesas

Key Features

Ideal for medium output power amplification.
PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm.
HFT3 technology (fT = 12 GHz) adopted.
High reliability through use of gold electrodes.
4-pin super minimold package.

2SC5750 npn silicon rf transistor by Renesas - Datasheet Preview

Datasheet Details

Part number	2SC5750
Manufacturer	Renesas
File Size	131.09 KB
Description	NPN SILICON RF TRANSISTOR
Datasheet	2SC5750 Datasheet

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Full PDF Text Transcription (Reference)

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5750 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gold electrodes • 4-pin super minimold package ORDERING INFORMATION Part Number 2SC5750 2SC5750-T1 Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 3 (Base), Pin 4 (Emitter) face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 50 pcs.