2SD1616 Datasheet - NEC

NPN SILICON EPITAXIAL TRANSISTOR

2SD1616 Features

* Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA)

* Large PT in small dimension with versatility PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A

* Complementary transistor with the 2SB1116 and 1116A PACKAGE DRAWING (UNIT: mm) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) P

2SD1616 General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full r.

2SD1616 Datasheet (98.76 KB)

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Datasheet Details

Part number:

2SD1616

Manufacturer:

NEC

File Size:

98.76 KB

Description:

Npn silicon epitaxial transistor.
DATA SHEET SILICON TRANSISTORS 2SD1616, 2SD1616A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATUR.

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2SD1616 NPN SILICON EPITAXIAL TRANSISTOR NEC

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2SD1616 Features

2SD1616 General Description

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2SD1616 Distributor