* Low On-Resistance RDS(on) = 2.0 Ω MAX. (@ VGS =
  –10 V, ID =
  –2.0 A)
*
*
*
* 15.0 ±0.3 3 ±0.1 4 ±0.2 Built-in G-.

PACKAGE DIMENSIONS (in millimeters) 10.0 ±0.3 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2 FEATURES
* Low On-Resistance RDS(on) = 2.

The 2SJ448 is P-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0 ±0.3 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2 FEATURES
* Low On-Resistance RDS(on) = 2.0 Ω MAX. (@ VGS =
 .

2SJ440

2SJ440-Y

2SJ449

2SJ400

2SJ401

2SJ402

2SJ406

2SJ407

2SJ409

2SJ409L

2SJ409S

2SJ410

2SJ411