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2SJ559 Datasheet, NEC

2SJ559 Datasheet, NEC

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2SJ559 switching equivalent

  • p-channel mos field effect transistor for high speed switching.
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2SJ559 Features and benefits

2SJ559 Features and benefits


* Can be driven by a 2.5 V power source.
* Low gate cut-off voltage. 1.0 1.6 ± 0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source V.

2SJ559 Application

2SJ559 Application

of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device befor.

2SJ559 Description

2SJ559 Description

The 2SJ559 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ559 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. PACKAGE DRAWING (Unit : mm) 0.3 .

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TAGS

2SJ559
P-CHANNEL
MOS
FIELD
EFFECT
TRANSISTOR
FOR
HIGH
SPEED
SWITCHING
NEC

Manufacturer


NEC

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