Full PDF Text Transcription for 2SJ603 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
2SJ603. For precise diagrams, and layout, please refer to the original PDF.
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ603 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ603 is P-channel MOS Field Effect Transistor designed for solenoid, mot...
View more extracted text
03 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. ORDERING INFORMATION PART NUMBER 2SJ603 2SJ603-S 2SJ603-ZJ 2SJ603-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMD Note FEATURES • Super low on-state resistance: RDS(on)1 = 48 mΩ MAX. (VGS = −10 V, ID = −13 A) RDS(on)2 = 75 mΩ MAX. (VGS = −4.0 V, ID = −13 A) • Low input capacitance: Ciss = 1900 pF TYP. (VDS = −10 V, VGS = 0 V) • Built-in gate protection diode Note TO-220SMD package is produced only in Japan. (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) www.DataSheet4U.
2SJ603 Datasheet
