Full PDF Text Transcription for 2SJ606 (Reference)
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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ606 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ606 is P-channel MOS Field Effect Transistor designed for high current ...
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06 is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SJ606 2SJ606-S 2SJ606-ZJ 2SJ606-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMD Note FEATURES • Super low on-state resistance: RDS(on)1 = 15 mΩ MAX. (VGS = −10 V, ID = −42 A) RDS(on)2 = 23 mΩ MAX. (VGS = −4.0 V, ID = −42 A) • Low input capacitance: Ciss = 4800 pF TYP. (VDS = −10 V, VGS = 0 V) • Built-in gate protection diode Note TO-220SMD package is produced only in Japan (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) www.DataSheet4U.
2SJ606 Datasheet
