* Super low on-state resistance: RDS(on)1 = 15 mΩ MAX. (VGS = −10 V, ID = −42 A) RDS(on)2 = 23 mΩ MAX. (VGS = −4.0 V, ID = −42 A)
* Low input capacitance: Ciss = .

ORDERING INFORMATION PART NUMBER 2SJ606 2SJ606-S 2SJ606-ZJ 2SJ606-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMD Note FEA.

The 2SJ606 is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SJ606 2SJ606-S 2SJ606-ZJ 2SJ606-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMD Note FEATURES
* Super low on-stat.

2SJ600

2SJ601

2SJ602

2SJ603

2SJ604

2SJ605

2SJ607

2SJ608

2SJ609

2SJ610

2SJ612

2SJ613

2SJ615

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