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  NEC Electronic Components Datasheet  

2SJ606 Datasheet

MOS FIELD EFFECT TRANSISTOR

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2SJ606 pdf
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ606
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ606 is P-channel MOS Field Effect Transistor designed
for high current switching applications.
FEATURES
Super low on-state resistance:
RDS(on)1 = 15 mMAX. (VGS = 10 V, ID = 42 A)
RDS(on)2 = 23 mMAX. (VGS = 4.0 V, ID = 42 A)
Low input capacitance:
Ciss = 4800 pF TYP. (VDS = 10 V, VGS = 0 V)
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
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Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
VGSS
ID(DC)
ID(pulse)
m 20
m 83
m 300
Total Power Dissipation (TC = 25°C)
PT 120
Total Power Dissipation (TA = 25°C)
PT 1.5
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg 55 to +150
IAS 40
EAS 160
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ606
TO-220AB
2SJ606-S
TO-262
2SJ606-ZJ
2SJ606-Z
TO-263
TO-220SMD Note
Note TO-220SMD package is produced only in
Japan
(TO-220AB)
V
V
A
A
W
W (TO-262)
°C
°C
A
mJ
Notes 1. PW 10 µs, Duty cycle 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 , VGS = 20 0 V
(TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14654EJ3V0DS00 (3rd edition)
Date Published July 2002 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
2000, 2001


  NEC Electronic Components Datasheet  

2SJ606 Datasheet

MOS FIELD EFFECT TRANSISTOR

No Preview Available !

2SJ606 pdf
2SJ606
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
IDSS
IGSS
VGS(off)
VDS = 60 V, VGS = 0 V
VGS = m 20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 42 A
Drain to Source On-state Resistance
RDS(on)1 VGS = 10 V, ID = 42 A
RDS(on)2 VGS = 4.0 V, ID = 42 A
Input Capacitance
Ciss VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 30 V, ID = 42 A
Rise Time
tr VGS = 10 V
Turn-off Delay Time
td(off)
RG = 0
Fall Time
tf
Total Gate Charge
QG VDD= 48 V
Gate to Source Charge
QGS VGS = 10 V
Gate to Drain Charge
QGD ID = 83 A
Body Diode Forward Voltage
VF(S-D) IF = 83 A, VGS = 0 V
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Reverse Recovery Time
Reverse Recovery Charge
trr IF = 83 A, VGS = 0 V
Qrr di/dt = 100 A/ µs
MIN.
1.5
38
TYP.
2.0
74
12
16
4800
1200
340
13
13
290
160
120
20
30
1.1
60
120
MAX. UNIT
10
m 10
2.5
µA
µA
V
S
15 m
23 m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
IAS BVDSS
VDS
ID
VDD
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS ()
0
τ
τ = 1 µs
Duty Cycle 1%
RL
VDD
VGS ()
VGS
Wave Form
0 10%
VDS ()
VDS
Wave Form
90%
VDS
0
td(on)
90%
VGS
10% 10%
90%
tr td(off) tf
ton toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet D14654EJ3V0DS


Part Number 2SJ606
Description MOS FIELD EFFECT TRANSISTOR
Maker NEC
Total Page 8 Pages
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