Datasheet Summary
SMD Type
MOS Field Effect Transistor 2SJ606
TO-263
Features
+0.1 1.27-0.1
MOSFET
Unit: mm
+0.1 1.27-0.1 +0.2 4.57-0.2
Low on-resistance RDS(on)1 =15 m RDS(on)2 = 23m MAX. (VGS =-10 V, ID = -42A)
+0.2 8.7-0.2
Low Ciss: Ciss = 4800 pF TYP. Built-in gate protection diode
+0.1 1.27-0.1
0.1max
+0.1 0.81-0.1
+0.2 5.28-0.2
2.54 5.08
+0.1 -0.1
+0.2 2.54-0.2
+0.2 15.25-0.2
+0.2 2.54-0.2
+0.2...
