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2SJ606 - MOS Field Effect Transistor

Key Features

  • +0.1 1.27-0.1 MOSFET Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low on-resistance RDS(on)1 =15 m RDS(on)2 = 23m MAX. (VGS =-10 V, ID = -42A) +0.2 8.7-0.2 Low Ciss: Ciss = 4800 pF TYP. Built-in gate protection diode +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 +0.2 2.54-0.2 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse).
  • Power dissipatio.

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SMD Type MOS Field Effect Transistor 2SJ606 TO-263 Features +0.1 1.27-0.1 MOSFET Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low on-resistance RDS(on)1 =15 m RDS(on)2 = 23m MAX. (VGS =-10 V, ID = -42A) +0.2 8.7-0.2 Low Ciss: Ciss = 4800 pF TYP. Built-in gate protection diode +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 +0.2 2.54-0.2 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s, duty cycle 1% Symbol VDSS VGSS ID ID PD PD Tch Tstg Rating -60 20 83 300 120 1.5 150 -55 to +150 Unit V V A A W W 5.60 1 Gate 2 Drain 3 Source MAX. (VGS = -4.