Datasheet4U Logo Datasheet4U.com

2SJ606 Datasheet Mos Field Effect Transistor

Manufacturer: NEC (now Renesas Electronics)

Overview: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ606 SWITCHING P-CHANNEL POWER MOS.

General Description

The 2SJ606 is P-channel MOS Field Effect Transistor designed for high current switching applications.

ORDERING INFORMATION PART NUMBER 2SJ606 2SJ606-S 2SJ606-ZJ 2SJ606-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMD Note

Key Features

  • Super low on-state resistance: RDS(on)1 = 15 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 42 A) RDS(on)2 = 23 mΩ MAX. (VGS =.
  • 4.0 V, ID =.
  • 42 A).
  • Low input capacitance: Ciss = 4800 pF TYP. (VDS =.
  • 10 V, VGS = 0 V).
  • Built-in gate protection diode Note TO-220SMD package is produced only in Japan (TO-220AB).

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Kexin Logo 2SJ606 MOS Field Effect Transistor Kexin
VBsemi Logo 2SJ606-Z 60V P-Channel MOSFET VBsemi
Kexin Logo 2SJ606-ZJ P-Channel MOSFET Kexin
VBsemi Logo 2SJ606-ZK 60V P-Channel MOSFET VBsemi

More Datasheets from NEC (now Renesas Electronics)

Part Number Description
2SJ600 P-Channel Power MOSFET
2SJ601 P-Channel Power MOSFET
2SJ602 MOS FIELD EFFECT TRANSISTOR
2SJ603 MOS FIELD EFFECT TRANSISTOR
2SJ604 P-Channel Power MOSFET
2SJ605 MOS FIELD EFFECT TRANSISTOR
2SJ607 MOS FIELD EFFECT TRANSISTOR
2SJ621 MOS FIELD EFFECT TRANSISTOR
2SJ624 MOS FIELD EFFECT TRANSISTOR
2SJ625 MOS FIELD EFFECT TRANSISTOR

2SJ606 Distributor