2SK1958
2SK1958 is N-Channel MOSFET manufactured by NEC.
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK1958 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras.
PACKAGE DIMENSIONS (in mm)
2.1 ±0.1 1.25 ±0.1
2.0 ±0.2 +0.1 0.3
- 0 0.65 0.65
Features
- Gate can be driven by 1.5 V
- Because of its high input impedance, there’s no need to consider drive current ponents required can be reduced
- Since bias resistance can be omitted, the number of
+0.1 +0.1
Marking
- 0.05
0.9 ±0.1
0...
