2SK1959 Datasheet - NEC

2SK1959 N-Channel MOSFET

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1959 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK1959 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras. PACKAGE DIMENSIONS (in mm) 4.5 ±0.1 1.6 ±0.2 1.5 ±0.1 Gate can be driven by 1.5 V Low ON resistance RDS(on) = 3.2 Ω MAX. .

2SK1959 Features

* S 0.42 ±0.06 1.5 D G 0.42 ±0.06 0.47 ±0.06 3.0 0.41 +0.03

* 0.05 Marking: NQ EQUIVALENT CURCUIT Drain (D) Gate (G) Gate protection diode Source (S) Internal diode PIN CONNECTIONS S: Source D: Drain G: Gate ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER Drain to Source Voltage Gate t

2SK1959_NEC.pdf