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2SK1958 - N-Channel MOSFET

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Overview

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1958 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK1958 is an N-channel vertical MOS FET.

Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras.

PACKAGE DIMENSIONS (in mm) 2.1 ±0.1 1.25 ±0.1 2.0 ±0.2 +0.1 0.3 –0 0.65 0.

Key Features

  • Gate can be driven by 1.5 V.
  • Because of its high input impedance, there’s no need to consider drive current components required can be reduced.
  • Since bias resistance can be omitted, the number of G S +0.1 +0.1 0.3 Marking 0.15.
  • 0.05 0.9 ±0.1 0 to 0.1 Marking: G21.

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