* Gate can be driven by 1.5 V
* Because of its high input impedance, there’s no need to consider drive current components required can be reduced
* Since bias resistance can be omitted, the number of G S +0.1 +0.1 0.3 Marking 0.15
* 0.05 0.9 ±0.1 0 to 0.1 Marking
2SK1958
NEC
60.63 KB
N-channel mosfet.
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1958 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK1958 is an N-channel vertical MOS FET. Because it .
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