* Gate can be driven by 1.5 V
* Because of its high input impedance, there’s no need to consider drive current components required can be reduced
* Since bias resistance can be omitted, the number of G S +0.1 +0.1 0.3 Marking 0.15
* 0.05 0.9 ±0.1 0 to 0.1 Marking
2SK1958
NEC
60.63 KB
N-channel mosfet.
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1958
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK1958 is an N-channel vertical MOS FET. Because it .
📁 Related Datasheet
2SK1953 - SWITCHING N-CHANNEL POWER MOSFET
(NEC)
.
2SK1954 - SWITCHING N-CHANNEL POWER MOSFET
(NEC)
.
2SK1954-Z - SWITCHING N-CHANNEL POWER MOSFET
(NEC)
.
2SK1957 - Silicon N-Channel MOSFET
(Hitachi Semiconductor)
2SK1957
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current.
2SK1959 - N-Channel MOSFET
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1959
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK1959 is an N-channel vertical MOS FET. Because it .
2SK19 - N-CHANNEL SILICON FET
(Micro Electronics)
.
2SK19 - N-Channel MOSFET
(ETC)
•
- 55~1 2 5
_L_~ヒ
0 .8 メッキ 3 . 5 11 1 0mm9~き 1 0
CI:~.
ID~VGS
Rr'?~O.nV(
~
トトー、-ノCーO~スlMO
~
.
2SK1900 - N-Channel MOSFET
(Sanyo Semicon Device)
.
