* S 0.42 ±0.06 1.5 D G 0.42 ±0.06 0.47 ±0.06 3.0 0.41 +0.03
* 0.05 Marking: NR EQUIVALENT CURCUIT Drain (D) Gate (G) Gate protection diode Source (S) Internal diode PIN CONNECTIONS S: Source D: Drain G: Gate ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER Drain to Source Voltage Gate t
2SK1960
NEC
60.23 KB
N-channel mosfet.
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1960
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK1960 is an N-channel vertical MOS FET. Because it .
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