DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1960 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK1960 is an N-channel vertical MOS FET.
Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras.
PACKAGE DIMENSIONS (in mm) 4.5 ±0.1 1.6 ±0.2 1.5 ±0.1 Gate can be driven by 1.5 V Low ON resistance RDS(on) = 0.8 Ω MAX.
