* New package intermediate between small signal and power types
* Gate can be driven by 1.5 V
* Low ON resistance RDS(on) = 0.40 Ω MAX. @ VGS = 1.5 V, ID = 1.0 A RDS(on) = 0.12 Ω MAX. @ VGS = 4.0 V, ID = 2.5 A EQUIVALENT CURCUIT Drain (D) 1.0 S 0.5 ±0.1 D 0.85 ±0.1 G 0.5
2SK2053
NEC
62.36 KB
N-channel mosfet.
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2053 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2053 is an N-channel vertical MOS FET. Because it .
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