* Low ON resistance RDS(on) = 1.0 Ω MAX. @VGS = 4.0 V, ID = 0.3 A
* High switching speed ton + toff < 100 ns
* Low parasitic capacitance 0.42 0.47 ±0.06 1.5 ±0.06 3.0 0.41+0.03
* 0.05 EQUIVALENT CIRCUIT Drain (D) Gate (G) Gate protection diode Source (S) Internal
2SK2109
NEC
58.68 KB
N-channel mosfet.
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2109 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2109 is a N-channel MOS FET of a vertical type and.
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