The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK211
2SK211
FM Tuner Applications VHF Band Amplifier Applications
Unit: mm
• Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) • High forward transfer admitance: |Yfs| = 9 mS (typ.) • Extremely low reverse transfer capacitance: Crss = 0.1 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range
Symbol
VGDO IG PD Tj Tstg
Rating
−18 10 150 125 −55~125
Unit
V mA mW °C °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.