10.0 ± 0.3
*
*
*
* φ3.2 ± 0.2 4.5 ± 0.2 2.7 ± 0.2 Low On-state Resistance RDS(on) = 1.1 Ω MAX. (VGS = 10 V, ID = 3.0 A) 15.0 ± 0.3 LOW Ciss Ciss = .

PACKAGE DIMENSIONS (in millimeters) FEATURES 10.0 ± 0.3
*
*
*
* φ3.2 ± 0.2 4.5 ± 0.2 2.7 ± 0.2 L.

The 2SK2141 is N-channel Power MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) FEATURES 10.0 ± 0.3
*
*
*
* φ3.2 ± 0.2 4.5 ± 0.2 2.7 ± 0.2 Low On-state Resistance.

2SK214

2SK2140

2SK2140-Z

2SK2142

2SK2144

2SK2145

2SK2146

2SK2147-01

2SK2147-01R

2SK2148-01

2SK2148-01R

2SK2149

2SK210