* Low On-Resistance
2SK2370: RDS(on) = 0.4 Ω (VGS = 10 V, ID = 10 A)
20.0 ± 0.2
* Low Ciss Ciss = 2400 pF TYP.
* High Avalanche Capability Ratings
ABSOLUTE .
PACKAGE DIMENSIONS (in millimeters)
φ 3.0 ± 0.2
1.0
15.7 MAX 4 4.7 MAX. 1.5
FEATURES
* Low On-Resistance
2SK2370:.
The 2SK2369/2SK2370 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters)
φ 3.0 ± 0.2
1.0
15.7 MAX 4 4.7 MAX. 1.5
FEATURES
* Low On-Resistance
2SK2370: RDS(on) = 0.4 Ω (VG.
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