* Low On-Resistance 2SK2370: RDS(on) = 0.4 Ω (VGS = 10 V, ID = 10 A) 20.0 ± 0.2
* Low Ciss Ciss = 2400 pF TYP.
* High Avalanche Capability Ratings ABSOLUTE .

PACKAGE DIMENSIONS (in millimeters) φ 3.0 ± 0.2 1.0 15.7 MAX 4 4.7 MAX. 1.5 FEATURES
* Low On-Resistance 2SK2370:.

The 2SK2369/2SK2370 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) φ 3.0 ± 0.2 1.0 15.7 MAX 4 4.7 MAX. 1.5 FEATURES
* Low On-Resistance 2SK2370: RDS(on) = 0.4 Ω (VG.

2SK2360

2SK2361

2SK2362

2SK2363

2SK2364

2SK2365

2SK2366

2SK2367

2SK2368

2SK2311

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